Spin-Circuit Model: Non-Local RSO "Datta-Das" Spin Transistor
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An important spintronic device proposal was the Datta-Das transistor based on a voltage-controlled spin precession effect. Koo et al., realized this device concept in the non-local geometry where a gate voltage controls the Rashba spin-orbit coupling coefficient in a 2DEG Rashba Spin-Orbit material channel. On changing the voltage of the gate the precession of the spins through the RSO material can be varied, as a result the non-local voltage at the left magnet varies. This forms the basis of a Spin Transistor.
Spin Circuit Model of Non-Local RSO Spin Transistor
This device can be modeled using the Ferromagnet, FM||NM Interface and Rashba Spin-Orbit modules as shown below:
NL RSO Spin Transistor |
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Physical Structure |
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Spin-Circuit Model |
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Illustrative Simulation Results
By changing the RSO coefficient of thechannel the non-local voltage VNL can be made to vary. Therefore a DC sweep of the RSO coefficient shows a variation of the VNL. The result of such a sweep is shown below:
Download
The model can be downloaded here.
References
- H. C. Koo, J. H. Kwon, J. Eom, J. Chang, S. H. Han, and M. Johnson, “Control of Spin Precession in a Spin-Injected Field Effect Transistor,” Science, vol. 325, no. 5947, pp. 1515–1518, Sep. 2009
- A. N. M. Zainuddin, S. Hong, L. Siddiqui, S. Srinivasan, and S. Datta, “Voltage-controlled spin precession,” Phys. Rev. B, vol. 84, no. 16, p. 165306, Oct. 2011