NPN Silicon RF Power Transistor MRF422 - Ð¤Ð¾ÑÑÐ¼ QRZ.RU

SEMICONDUCTOR TECHNICAL DATA 

Order this document 

by MRF422/D 

The RF Line 

 

 

Designed primarily for applications as a high–power linear amplifier from 2.0 

to 30 MHz. 

• Specified 28 Volt, 30 MHz Characteristics — 

Output Power = 150 W (PEP) 

Minimum Gain = 10 dB 

Efficiency = 40% 

• Intermodulation Distortion @ 150 W (PEP) — 

IMD = –30 dB (Min) 

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR 

 

150 W (PEP), 30 MHz 

RF POWER 

TRANSISTORS 

NPN SILICON 

MAXIMUM RATINGS 

Rating Symbol Value Unit 

Collector–Emitter Voltage VCEO 40 Vdc 

Collector–Base Voltage VCBO 85 Vdc 

Emitter–Base Voltage VEBO 3.0 Vdc 

Collector Current — Continuous IC 20 Adc 

Withstanding Current — 10 s — 30 Adc 

Total Device Dissipation @ TC = 25°C 

Derate above 25°C 

PD 290 

1.66 

Storage Temperature Range Tstg –65 to +150 °C 

THERMAL CHARACTERISTICS 

Watts 

W/°C 

Characteristic Symbol Max Unit 

Thermal Resistance, Junction to Case RθJC 0.6 °C/W 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) 

OFF CHARACTERISTICS 

CASE 211–11, STYLE 1 

Characteristic Symbol Min Typ Max Unit 

Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V(BR)CEO 35 — — Vdc 

Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 85 — — Vdc 

Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 85 — — Vdc 

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc 

Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) ICES — — 20 mAdc 

(continued) 

REV 6 

© MOTOROLA Motorola, Inc. 1994 RF DEVICE DATA 

MRF422 

1

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) 

ON CHARACTERISTICS 

DC Current Gain 

(IC = 5.0 Adc, VCE = 5.0 Vdc) 

Characteristic Symbol Min Typ Max Unit 

hFE 15 30 120 — 

DYNAMIC CHARACTERISTICS 

Output Capacitance 

(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) 

FUNCTIONAL TESTS 

Common–Emitter Amplifier Power Gain 

(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, 

ICQ = 150 mAdc, f = 30, 30.001 MHz) 

Collector Efficiency 

(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc, 

ICQ = 150 mAdc, f = 30, 30.001 MHz) 

Intermodulation Distortion (1) 

(VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc, 

ICQ = 150 mAdc, f = 30, 30.001 MHz) 

Output Power 

(VCE = 28 Vdc, f = 30 MHz) 

Cob — 420 — pF 

GPE 10 13 — dB 

η — 45 — % 

IMD — –33 –30 dB 

Pout 150 — — Watts 

(PEP) 

NOTE: 

1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone. 

+ 

R1 

+ 

BIAS 

CR1 C6 C7 

L5 

C8 C9 C10 C11 

28 Vdc 

– 

L2 

L3 

C2 

L1 

D.U.T. 

L4 

C4 

– 

C1 

R2 

C3 

C5 

C1, C2, C3, C5 — 170–680 pF, ARCO 469 

C4 — 80–480 pF, ARCO 466 

C6, C8, C11 — ERIE 0.1 µF, 100 V 

C7 — MALLORY 500 µF, 15 V Electrolytic 

C9 — UNDERWOOD 1000 pF, 350 V 

C10 — 10 µF, 50 V Electrolytic 

R1 — 10 Ω, 25 Watt Wire Wound 

R2 — 10 Ω, 1.0 Watt Carbon 

CR1 — 1N4997 

L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long 

L2 — 10 µH Molded Choke 

L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia. 

L4 — 5 Turns, 1/8″ Copper Tubing 

L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B 

Figure 1. 30 MHz Test Circuit Schematic 


2 

MOTOROLA RF DEVICE DATA

P out , OUTPUT POWER (WATTS PEP) 

280 

240 

200 

160 

120 

80 

40 

VCC = 28 V 

ICQ = 150 mA 

TWO TONE TEST: 

f = 30, 30.001 MHz 

G PE , POWER GAIN (dB) 

25 

20 

15 

10 

5 

VCC = 28 V 

ICQ = 150 mA 

Pout = 150 W PEP 

0 

0 

2 

4 6 8 10 12 14 

Pin, INPUT POWER (WATTS PEP) 

0 

1.5 

2 3 5 7 10 15 20 30 

f, FREQUENCY (MHz) 

Figure 2. Output Power versus Input Power 

Figure 3. Power Gain versus Frequency 

P out , OUTPUT POWER (WATTS PEP) 

280 

240 

200 

160 

120 

80 

40 

IMD = 30 dB 

ICQ = 25 mA 

f = 30, 30.001 MHz 

0 

16 20 24 28 32 

VCC, SUPPLY VOLTAGE (VOLTS) 

IMD, INTERMODULATION DISTORTION (dB) 

–10 

– 20 

– 30 

– 40 

– 50 

0 

VCC = 28 V 

ICQ = 150 mA 

f = 30, 30.001 MHz 

3RD ORDER 

5TH ORDER 

40 80 120 160 

Pout, OUTPUT POWER (WATTS PEP) 

200 

Figure 4. Linear Output Power versus 

Supply Voltage 

Figure 5. Intermodulation Distortion 

versus Output Power 

40 

IC, COLLECTOR CURRENT (AMP) 

20 

8 

4 

2 

0.8 

0.4 

1 

TC = 25°C 

2 

5 10 20 50 100 

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 

30 

15 

7 

f = 2 MHz 

VCC = 28 V 

ICQ = 150 mA 


FREQUENCY 

MHz 

2 

7 

15 

30 

Zin 

Ohms 

4.90 – j1.54 

2.10 – j0.93 

1.32 – j0.38 

0.81 – j0.26 

Figure 6. DC Safe Operating Area 

Figure 7. Series Input Impedance 

MOTOROLA RF DEVICE DATA 


3

5 

10 

Rout , PARALLEL EQUIVALENT OUTPUT 

RESISTANCE (OHMS) 

4 

3 

2 

1 

0 

1.5 

VCC = 28 V 

ICQ = 150 mA 


2 3 5 7 10 15 20 30 


C out , PARALLEL EQUIVALENT OUTPUT 

CAPACITANCE (pF) 

8 

6 

4 

2 

0 

1.5 

VCC = 28 V 

ICQ = 150 mA 


2 3 5 7 10 15 20 30 


Figure 8. Output Resistance versus Frequency 

Figure 9. Output Capacitance versus Frequency 

PACKAGE DIMENSIONS 

A 

U 

M 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI 

Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

H 

J 

Q 

1 

2 

K 

3 

4 

D 

M 

E 

R 

C 

B 

SEATING 

PLANE 

INCHES MILLIMETERS 

DIM MIN MAX MIN MAX 

A 0.960 0.990 24.39 25.14 

B 0.465 0.510 11.82 12.95 

C 0.229 0.275 5.82 6.98 

D 0.216 0.235 5.49 5.96 

E 0.084 0.110 2.14 2.79 

H 0.144 0.178 3.66 4.52 

J 0.003 0.007 0.08 0.17 

K 0.435 ––– 11.05 ––– 

M 45 NOM 45 NOM 

Q 0.115 0.130 2.93 3.30 

R 0.246 0.255 6.25 6.47 

U 0.720 0.730 18.29 18.54 

STYLE 1: 

PIN 1. EMITTER 

2. BASE 

3. EMITTER 

4. COLLECTOR 

CASE 211–11 

ISSUE N 

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding 

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, 

and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different 

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does 

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in 

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of 

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such 

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless 

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death 

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. 

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How to reach us: 

USA / EUROPE: Motorola Literature Distribution; 

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 

INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 


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MOTOROLA RF DEVICE MRF422/D DATA

NPN Silicon RF Power Transistor MRF422 - Ð¤Ð¾ÑÑÐ¼ QRZ.RU

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